View source for Effective Transition Rates for Epitaxial Growth Using Fast Modulation

{{HTDB paper
| authors = Martha A. Gallivan, David G. Goodwin, Richard M. Murray
| title = Effective Transition Rates for Epitaxial Growth Using Fast Modulation
| source = <i>Physical Review B</i>, 70(4), Art No. 045409
| year = 2004
| type =  Journal 
  submission
| funding = AFOSR/MURI, DARPA/ferro
| url = http://www.cds.caltech.edu/~murray/preprints/ggm01-cds.pdf
| abstract = 
Thin film deposition is an industrially-important process that is highly dependent on the process
conditions. Most films are grown under constant conditions, but a few studies show that modified
properties may be obtained with periodic inputs. However, assessing the effects of modulation
experimentally becomes impractical with increasing material complexity. Here we consider periodic
conditions in which the period is short relative to the time-scales of growth. We analyze a stochastic
model of thin film growth, computing effective transition rates associated with rapid periodic
process parameters. Combinations of effective rates may exist which are not attainable under
steady conditions, potentially enabling new film properties. An algorithm is presented to construct
the periodic input for a desired set of effective transition rates. These ideas are first illustrated
by two simple examples using kinetic Monte Carlo simulations and are then compared to existing
deposition techniques.
| flags = 
| tag = ggm04-prb
| id = 2001m
}}